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Resistance switching properties of Ag/ZnMn<sub>2</sub>O<sub>4</sub>/p-Si fabricated by magnetron sputtering for resistance random access memory https://journal.hep.com.cn/jowuotm/EN/10.1007/s11595-015-1288-1
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Resistance switching properties of Ag/ZnMn<sub>2</sub>O<sub>4</sub>/p-Si fabricated by magnetron sputtering for resistance random access memory https://journal.hep.com.cn/jowuotm/EN/10.1007/s11595-015-1288-1
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