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Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-Si<sub>1-<i>x</i></sub>Ge<sub> <i>x</i></sub> https://journal.hep.com.cn/jowuotm/EN/10.1007/s11595-015-1245-z
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Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-Si<sub>1-<i>x</i></sub>Ge<sub> <i>x</i></sub> https://journal.hep.com.cn/jowuotm/EN/10.1007/s11595-015-1245-z
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