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An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers https://journal.hep.com.cn/jocsu/EN/10.1007/s11771-021-4887-3
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An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers https://journal.hep.com.cn/jocsu/EN/10.1007/s11771-021-4887-3
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