微博
加入微博一起分享新鲜事
登录
|
注册
140
Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs https://journal.hep.com.cn/fitee/EN/10.1631/FITEE.1601121
请登录并选择要私信的好友
300
Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs https://journal.hep.com.cn/fitee/EN/10.1631/FITEE.1601121
赞一下这个内容
公开
分享
获取分享按钮
正在发布微博，请稍候